? auirll024n v dss 55v r ds(on) max. 0.065 ?? i d 3.1a description specifically designed for automotive applications, this cellular design of hexfet? power mosfets utilizes the latest processing techniques to achiev e low on-resistan ce per silicon area. this benefit combined with the fast switching speed and ruggedized device design that hexfet power mosfets are well known for, provides the designer with an extremely efficient and reliable device for use in automotive and a wide variety of other applications. features ? advanced planar technology ? low on-resistance ? logic level gate drive ? dynamic dv/dt rating ? 150c operating temperature ? fast switching ? fully avalanche rated ? repetitive avalanche allowed up to tjmax ? lead-free, rohs compliant ? automotive qualified * 1 2015-10-29 hexfet? is a registered trademark of infineon. * qualification standards can be found at www.infineon.com ? automotive grade symbol parameter max. units i d @ t a = 25c continuous drain current, v gs @ 10v ? 4.4 a ? i d @ t a = 25c continuous drain current, v gs @ 10v ? 3.1 i d @ t a = 70c continuous drain current, v gs @ 10v ? 2.5 i dm pulsed drain current ? 12 p d @t a = 25c maximum power dissipation (pcb mount) ? 2.1 p d @t a = 25c maximum power dissipation (pcb mount) ? 1.0 linear derating factor (pcb mount) ? 8.3 w/c v gs gate-to-source voltage 16 v e as single pulse avalanche energy (thermally limited) ? 120 mj i ar avalanche current ? 3.1 a dv/dt peak diode recovery dv/dt ? 5.0 v/ns t j operating junction and -55 to + 150 c ? t stg storage temperature range w e ar repetitive avalanche energy ?? 0.1 mj absolute maximum ratings stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress ratings only; and functional operation of the device at these or any other condition beyond thos e indicated in the specificatio ns is not implied. exposure to absolute-maximum-rated conditions for exte nded periods may affect device reliability. the thermal resistan ce and power dissipation ratings are measured under board mounted and still air conditions. ambient temperature (ta) is 25c, unle ss otherwise specified. thermal resistance ? symbol parameter typ. max. units c/w r ? ja junction-to-ambient (pcb mount, steady state) ? 90 120 r ? ja junction-to-ambient (pcb mount, steady state) ? 50 60 s g sot-223 auirll024n d base part number package type standard pack orderable part number form quantity auirll024n sot-223 tape and reel 2500 AUIRLL024NTR g d s gate drain source d hexfet ? power mosfet
? auirll024n 2 2015-10-29 notes: ? ? repetitive rati ng; pulse width limited by max. junction temperature. (see fig. 11) ? starting t j = 25c, l = 25mh, r g = 25 ? , i as = 3.1a. (see fig. 12) ?? i sd ?? 1.9a, di/dt ?? 270a/s, v dd ?? v (br)dss , t j ? 150c. ? pulse width ?? 300s; duty cycle ? 2%. ? when mounted on fr-4 board using minimum recommended footprint. ?? when mounted on 1 inch square copper board, for comparison with other smd devices. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 55 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.048 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.065 v gs = 10v, i d = 3.1a ?? ??? ??? 0.080 v gs = 5.0v, i d = 2.5a ?? ??? ??? 0.100 v gs = 4.0v, i d = 1.6a ?? v gs(th) gate threshold voltage 1.0 ??? 2.0 v v ds = v gs , i d = 250a gfs forward trans conductance 3.3 ??? ??? s v ds = 25v, i d = 1.9a i dss drain-to-source leakage current ??? ??? 25 a v ds = 55v, v gs = 0v ??? ??? 250 v ds = 44v,v gs = 0v,t j = 125c i gss gate-to-source forward leakage ??? ??? 100 na v gs = 16v gate-to-source reverse leakage ??? ??? -100 v gs = -16v dynamic electrical characteristics @ t j = 25c (unless otherwise specified) q g total gate charge ??? 10.4 15.6 nc ? i d = 1.9a q gs gate-to-source char ge ??? 1.5 2.3 v ds = 44v q gd gate-to-drain charge ??? 5.5 8.3 v gs = 5.0v, see fig 6 and 13 ? t d(on) turn-on delay time ??? 7.4 ??? ns v dd = 28v t r rise time ??? 21 ??? i d = 1.9a t d(off) turn-off delay time ??? 18 ??? r g = 24 ?? t f fall time ??? 25 ??? r d = 15 ??? see fig. 10 ? ? c iss input capacitance ??? 510 ??? pf ? v gs = 0v c oss output capacitance ??? 140 ??? v ds = 25v c rss reverse transfer capacitance ??? 58 ??? ? = 1.0mhz, see fig.5 diode characteristics ? parameter min. typ. max. units conditions i s continuous source current ??? ??? 3.1 a mosfet symbol (body diode) showing the i sm pulsed source current ??? ??? 12 integral reverse (body diode) ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.0 v t j = 25c,i s = 1.9a,v gs = 0v ?? t rr reverse recovery time ??? 39 58 ns t j = 25c ,i f = 1.9a, q rr reverse recovery charge ??? 63 94 nc di/dt = 100a/s ??? t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by ls+ld) ?????
? auirll024n 3 2015-10-29 fig. 2 typical output characteristics fig. 3 typical transfer characteristics fig. 4 normalized on-resistance vs. temperature fig. 1 typical output characteristics 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 10v 7.0v 5.5v 4.5v 4.0v 3.5v 2.7v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 2.7v 1 10 100 2 4 6 8 10 12 v = 25v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 3.1a
? auirll024n 4 2015-10-29 fig 5. typical capacitance vs. drain-to-source voltage fig 6. typical gate charge vs. gate-to-source voltage ? fig 8. maximum safe operating area fig. 7 typical source-to-drain diode forward voltage 1 10 100 0 200 400 600 800 1000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c iss c oss c rss 0 4 8 12 16 20 0 3 6 9 12 15 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 1.9a v = 11v ds v = 27v ds v = 44v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 1.4 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 0.1 1 10 100 0.1 1 10 100 1000 ope ration in this a rea limite d by r ds(on) single pulse t t = 150 c = 25 c j c v , drain-to-source voltage (v) i , drain current (a) i , drain current (a) ds d 100us 1ms 10ms
? auirll024n 5 2015-10-29 fig 11. maximum effective transient thermal impedance, junction-to-ambient fig 10a. switching time test circuit fig 10b. switching time waveforms fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 0.0 1.0 2.0 3.0 4.0 t , case temperature ( c) i , drain current (a) c d 0.1 1 10 100 1000 0.00001 0.0001 0.001 0.01 0.1 1 10 100 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thja a p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thja 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
? auirll024n 6 2015-10-29 fig 12a. unclamped inductive test circuit fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v fig 13b. gate charge test circuit vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 13a. basic gate charge waveform 25 50 75 100 125 150 0 50 100 150 200 250 300 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 1.4a 2.5a 3.1a
? auirll024n 7 2015-10-29 ? sot-223(to-261aa) part marking information sot-223 (to-261aa) package outline (dimensions are shown in millimeters (inches) note: for the most current drawing please refer to ir website at http://www.irf.com/package/ ll024n date code y= year ww= work week a= automotive, lead free
? auirll024n 8 2015-10-29 sot-223(to-261aa) tape and reel ( dimensions are shown in millimeters (inches) 4.10 (.161) 3.90 (.154) 1.85 (.072) 1.65 (.065) 2.05 (.080) 1.95 (.077) 12.10 (.475) 11.90 (.469) 7.10 (.279) 6.90 (.272) 1.60 (.062) 1.50 (.059) typ. 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 2.30 (.090) 2.10 (.083) 16.30 (.641) 15.70 (.619) 0.35 (.013) 0.25 (.010) feed direction tr 13.20 (.519) 12.80 (.504) 50.00 (1.969) min. 330.00 (13.000) max. notes : 1. controlling dimension: millimeter. 2. outline conforms to eia-481 & eia-541. 3. each o330.00 (13.00) reel contains 2,500 devices. 3 notes : 1. outline comforms to eia-418-1. 2. controlling dimension: millimeter.. 3. dimension measured @ hub. 4. includes flange distortion @ outer edge. 15.40 (.607) 11.90 (.469) 18.40 (.724) max. 14.40 (.566) 12.40 (.488) 4 4 note: for the most current drawing please refer to ir website at http://www.irf.com/package/
? auirll024n 9 2015-10-29 ? qualification information qualification level automotive (per aec-q101) comments: this part number(s) passed automotive qualification. infineon?s industrial and consumer qualification level is granted by extension of the higher automotive level. moisture sensitivity level sot-223 msl1 esd machine model class m2 (+/- 150v) ? aec-q101-002 human body model ? class h1a (+/- 500v) ? aec-q101-001 charged device model class c5 (+/- 2000v) ? aec-q101-005 rohs compliant yes published by infineon technologies ag 81726 mnchen, germany ? infineon technologies ag 2015 all rights reserved. important notice the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (?beschaffenheitsgarantie?). with respect to any examples , hints or any typical values stated herein and/or any information regarding the application of the product, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any thi rd party. in addition, any information given in this document is subject to customer?s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer ?s products and any use of the product of infineon technologies in customer?s applications. the data contained in this document is exclusively intended for technically trai ned staff. it is the responsibility of customer?s technical departments to evaluate the suit ability of the product for the intended application and the completeness of the product information given in this document with respect to such application. for further information on the product, technology, delivery terms and conditions and prices please contact your nearest infineon technologies office ( www.infineon.com ). warnings due to technical requirements products may contain danger ous substances. for information on the types in question please contact your nearest infineon technologies office. except as otherwise explicitly appr oved by infineon technologies in a written document signed by authorized representatives of infineon technologies, infineon technolog ies? products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury. revision history date comments 10/29/2015 ?? updated datasheet with corporate template ?? corrected ordering table on page 1. 3/25/2014 ?? added "logic level gate drive" bullet in the features section on page 1 ?? updated part marking on page 7 ?? updated data sheet with new ir corporate template ? highest passing voltage.
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